专利名称：Method for forming a metal wire of a
semiconductor device
发明人：Yang K. Choi申请号：US08/388685申请日：19950215公开号：US05466640A公开日：19951114
摘要：The object of the present invention is to prevent the electrical short betweenthe adjacent metal wires by forming metal wires alternately between insulation films andto improve the process margin in the lithography process and the etching process.
The present invention alternately forms a plurality of metal wires between theinsulation films by manufacturing the photomask for metal wires in two separate piecesto correspond to the photomask for general metal wires for forming a plurality of metalwires which are densely constituted, and by utilizing the two photomasks.
申请人：HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
代理机构：Fish & Richardson
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